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Si1013R/X
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
1.2 @ VGS = -4.5 V -20 1.6 @ VGS = -2.5 V 2.7 @ VGS = -1.8 V
ID (mA)
-350 -300 -150
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 14 ns 1.8-V Operation Gate-Source ESD Protection
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G 1
Ordering Information: SC-75A (SOT- 416): Si1013R-Marking Code : D SC-89 (SOT- 490): Si1013X-Marking Code: B
Top View
3
D
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b _ Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC-75 TA = 25_C TA = 85_C TA = 25_C for SC-89 TA = 85_C TJ, Tstg ESD PD TA = 25_C TA = 85_C ID IDM IS -275 175 90 275 160 -55 to 150 2000
Symbol
VDS VGS
5 secs
Steady State
-20 "6
Unit
V
-400 -300 -1000
-350 -275 mA -250 150 80 250 140 _C V mW
Maximum Power
Dissipationb
Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board. Document Number: 71167 S-02464--Rev. A, 25-Oct-00
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Si1013R/X
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "4.5 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 85_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -350 mA Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -300 m A VGS = -1.8 V, ID = -150 m A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -250 mA IS = -150 mA, VGS = 0 V -700 0.8 1.2 1.8 0.4 -0.8 -1.2 1.2 1.6 2.7 S V W -0.45 "1 -0.3 "2 -100 -5 V mA nA mA mA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = -10 V, RL = 47 W ID ^ -200 mA, VGEN = -4.5 V, RG = 10 W VDS = -10 V, VGS = -4.5 V, ID = -250 mA 1500 150 450 5 9 35 11 ns pC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Output Characteristics
1.0 VGS = 5 thru 3 V 0.8 I D - Drain Current (mA) I D - Drain Current (A) 2.5 V 800 1000
Transfer Characteristics
TJ = -55_C 25_C
0.6 2V 0.4 1.8 V
600
125_C
400
0.2
200
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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Document Number: 71167 S-02464--Rev. A, 25-Oct-00
Si1013R/X
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
On-Resistance vs. Drain Current
4.0 r DS(on) - On-Resistance ( W ) 120
Vishay Siliconix
Capacitance
VGS = 1.8 V 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V 0.8
C - Capacitance (pF)
3.2
100 Ciss
80
60
40 Coss 20 Crss 0
0.0 0 200 400 600 800 1000
0
4
8
12
16
20
ID - Drain Current (mA)
VDS - Drain-to-Source Voltage (V)
Gate Charge
5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 250 mA 4 1.6
On-Resistance vs. Junction Temperature
r DS(on) - On-Resistance ( W) (Normalized)
1.4 VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA
3
2
1.0
1
0.8
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.6 -50
-25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
1000 IS - Source Current (mA) TJ = 125_C r DS(on) - On-Resistance ( W ) 4 5
On-Resistance vs. Gate-to-Source Voltage
100 TJ = 25_C TJ = -55_C 10
3 ID = 350 mA 2 ID = 200 mA 1
1 0.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71167 S-02464--Rev. A, 25-Oct-00
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Si1013R/X
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Threshold Voltage Variance vs. Temperature
0.3 3.0
IGSS vs. Temperature
0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 IGSS - (mA)
2.5
2.0 VGS = 4.5 V
-0.0
1.5
-0.1
1.0
-0.2
0.5
-0.3 -50
-25
0
25
50
75
100
125
0.0 -50
-25
0
25
50
75
100
125
TJ - Temperature (_C)
TJ - Temperature (_C)
BVGSS vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 -50
-25
0
25
50
75
100
125
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA =833_C/W
t1 t2
Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
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Document Number: 71167 S-02464--Rev. A, 25-Oct-00
Si1013R/X
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
Vishay Siliconix
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10
Document Number: 71167 S-02464--Rev. A, 25-Oct-00
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